This book provides one of the most rigorous treatments of compound semiconductor device physics yet published. A complete understanding of modern devices requires a working knowledge of low-dimensional physics, the use of statistical methods, and the use of one-, two-, and three-dimensional analytical and numerical analysis techniques. With its systematic and detailed**discussion of these topics, this book is ideal for both the researcher and the student. Although the emphasis of this text is on compound semiconductor ...
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This book provides one of the most rigorous treatments of compound semiconductor device physics yet published. A complete understanding of modern devices requires a working knowledge of low-dimensional physics, the use of statistical methods, and the use of one-, two-, and three-dimensional analytical and numerical analysis techniques. With its systematic and detailed**discussion of these topics, this book is ideal for both the researcher and the student. Although the emphasis of this text is on compound semiconductor devices, many of the principles discussed will also be useful to those interested in silicon devices. Each chapter ends with exercises that have been designed to reinforce concepts, to complement arguments or derivations, and to emphasize the nature of approximations by critically evaluating realistic conditions.
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Seller's Description:
Good; Hardcover; 1991, Academic Press; Clean covers; Name on 1st endpaper, otherwise unmarked pages; Condition lowered due to a watermark to the top text-block edge which has caused a slight wrinkle to the top margin of many of the pages (does not extend to written text or affect readability); Good binding with straight spine; Grey covers with title in gold lettering; 828 pages; "Compound Semiconductor Device Physics, " by Sandip Tiwari.