The definitive reference on semiconductor characterization tools! Here, in one well-organized volume, are detailed explanations of the advanced and "traditional") techniques for evaluating virtually every criterion: crystal defects, impurity concentration, lifetime, film thickness, resistivity, and such critical electrical properties as mobility, Hall effect, and conductivity type. Reliable, high-accuracy methods of measuring hardness, stress, and various kinds of surface contamination are also included. In addition to its ...
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The definitive reference on semiconductor characterization tools! Here, in one well-organized volume, are detailed explanations of the advanced and "traditional") techniques for evaluating virtually every criterion: crystal defects, impurity concentration, lifetime, film thickness, resistivity, and such critical electrical properties as mobility, Hall effect, and conductivity type. Reliable, high-accuracy methods of measuring hardness, stress, and various kinds of surface contamination are also included. In addition to its value as a practical everyday reference, the text also serves as an excellent user's guide to the latest methods of optical microscopy, scanning electron microscopy (SEM), electron microprobe analysis, transmission electron microscopy (TEM), Auger electron spectroscopy (AES), scanning probe microscopy (SPM), and secondary ion mass spectrometry (SIMS). This is the only guide that offers such "dual coverage" of its topic -- in terms of both measurements and tools.
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Seller's Description:
Good+; Hardcover; 2nd Edition; Withdrawn library copy with the standard library markings; Light wear to the covers; Library stamps to the endpapers; Text pages are clean & unmarked; Binding is excellent with a straight spine; This book will be shipped in a sturdy cardboard box with foam padding; Medium Format (8.5"-9.75" tall); 1.9 lbs; Purple, blue, and black covers with title in white lettering; 1998, McGraw-Hill Professional Publishing; 454 pages; "Semiconductor Measurements and Instrumentation, " by W. R. Runyan, et al.