M. M. Glazov

M. M. Glazov graduated from the Polytechnical University (St.-Petersburg, Russia) in 2005, after defence of his master of physics thesis on effects of electron-electron interactions on spin relaxation in semiconductors. He obtained a PhD in semiconductor physics at Ioffe Institute 2008 after defending the thesis "Spin dynamics of electrons and excitons in quantum wells and quantum dots", and defended the Habilitation (Doctor of Sciences in Russia) "Spin and kinetic phenomena in nanostructures...See more

M. M. Glazov graduated from the Polytechnical University (St.-Petersburg, Russia) in 2005, after defence of his master of physics thesis on effects of electron-electron interactions on spin relaxation in semiconductors. He obtained a PhD in semiconductor physics at Ioffe Institute 2008 after defending the thesis "Spin dynamics of electrons and excitons in quantum wells and quantum dots", and defended the Habilitation (Doctor of Sciences in Russia) "Spin and kinetic phenomena in nanostructures and graphene" in 2012 also at Ioffe Institute. In 2016, Mikhail was elected as a corresponding member to Russian Academy of Sciences. His research interests include theory of spin effects in semiconductors, physics of two-dimensional materials and light-matter coupling effects. See less