All model parameters are fundamentally coupled together, so that directly measured individual parameters, although widely used and accepted, may initially only serve as good estimates. This comprehensive resource presents all aspects concerning the modeling of semiconductor field-effect device parameters based on gallium-arsenide (GaAs) and generative adversarial network (GaN) technology. Metal-semiconductor field-effect transistors (MESFETs), high electron mobility transistors (HEMTs) and heterojunction bipolar transistors ...
Read More
All model parameters are fundamentally coupled together, so that directly measured individual parameters, although widely used and accepted, may initially only serve as good estimates. This comprehensive resource presents all aspects concerning the modeling of semiconductor field-effect device parameters based on gallium-arsenide (GaAs) and generative adversarial network (GaN) technology. Metal-semiconductor field-effect transistors (MESFETs), high electron mobility transistors (HEMTs) and heterojunction bipolar transistors (HBTs), their structures and functions, and existing transistor models are also classified. The Shockley model is presented in order to give insight into semiconductor field-effect transistor (FET) device physics and explain the relationship between geometric and material parameters and device performance. Extraction of trapping and thermal time constants is discussed. A special section is devoted to standard nonlinear FET models applied to large-signal measurements, including static-/pulsed-DC and single-/two-tone stimulation. High power measurement setups for signal waveform measurement, wideband source-/load-pull measurement (including envelope source-/load pull) are also included, along with high-power intermodulation distortion (IMD) measurement setup (including envelope load-pull). Written by a world-renowned expert in the field, this book is the first to cover of all aspects of semiconductor FET device modeling in a single volume.
Read Less
Add this copy of Telecommunication Electronics to cart. $37.63, good condition, Sold by Opalick rated 3.0 out of 5 stars, ships from evans, GA, UNITED STATES, published 2020 by Artech House Publishers.
Choose your shipping method in Checkout. Costs may vary based on destination.
Seller's Description:
Good. Buy with confidence! Comes with our 100% money back guarantee! ! Tracking included with every order! ! ! The cover shows normal wear and tear....The pages show normal wear....
Add this copy of Telecommunication Electronics to cart. $60.44, very good condition, Sold by Suffolk Books rated 4.0 out of 5 stars, ships from center moriches, NY, UNITED STATES, published 2020 by Artech House Publishers.
Add this copy of Telecommunication Electronics to cart. $84.24, good condition, Sold by Dotcom liquidators / dc1 rated 4.0 out of 5 stars, ships from Fort Worth, TX, UNITED STATES, published 2020 by Artech House Publishers.
Add this copy of Telecommunication Electronics to cart. $96.00, good condition, Sold by Dotcom liquidators / dc1 rated 4.0 out of 5 stars, ships from Fort Worth, TX, UNITED STATES, published 2020 by Artech House Publishers.
