The physics of nonequilibrium electrons and phonons in semiconductors is an important branch of fundamental physics that has many practical applications, especially in the development of ultrafast and ultrasmall semiconductor devices. This volume is devoted to different trends in the field which are presently at the forefront of research. Special attention is paid to the ultrafast relaxation processes in bulk semiconductors and two-dimensional semiconductor structures, and to their study by different spectroscopic methods, ...
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The physics of nonequilibrium electrons and phonons in semiconductors is an important branch of fundamental physics that has many practical applications, especially in the development of ultrafast and ultrasmall semiconductor devices. This volume is devoted to different trends in the field which are presently at the forefront of research. Special attention is paid to the ultrafast relaxation processes in bulk semiconductors and two-dimensional semiconductor structures, and to their study by different spectroscopic methods, both pulsed and steady-state. and the relaxation kinetics of hot carriers and phonons are considered under various conditions such as temperature, doping and pumping intensity by leading experts in the field.
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Very Good. 1992 North-Holland / Elsevier (Amsterdam, The Netherlands), 6 3/4 x 9 3/4 inches tall red cloth hardcover in publisher's unclipped dust jacket, gilt lettering to spine, illustrated with diagrams, xiii, 498 pp. A very good to near fine copy-clean, bright and unmarked-in a like dust jacket which is nicely preserved and displayed in a clear archival Brodart sleeve. Due to the weight of the book, additional postage will be required for standard international orders. ~SP45~ [3.0P] The physics of nonequilibrium electrons and phonons in semiconductors is an important branch of fundamental physics that has many practical applications, especially in the development of ultrafast and ultrasmall semiconductor devices. Special attention in this volume is paid to the ultrafast relaxation processes in bulk semiconductors and two-dimensional semiconductor structures, and to their study by different spectroscopic methods, both pulsed and steady-state. The evolution of energy and space distribution of nonequilibrium electrons and the relaxation kinetics of hot carriers and phonons are considered under various conditions such as temperature, doping and pumping intensity by leading experts in the field. Contents: Chapter 1. Monte Carlo calculation of hot electrons and hot phonons; 1. Introduction; 2. The transport model; 3. The Monte Carlo algorithm; 4. Simple case: excitation from a single valence-band level; 5. Realistic model: excitation from a three-valence-band model; 6. Field-dependent case; 7. Conclusions; References; Chapter 2. Ultrafast Luminescence Spectroscopy of Semiconductors: Carrier Relaxation, Transport and Tunneling; 1. Introduction. 2. Ultrafast luminescence techniques3. Luminescence spectroscopy of nonequilibrium carriers; 4. Optical studies of perpendicular transport and tunneling; 5. Summary and conclusions; References; Chapter 3. Nonequilibrium Phonons in Semiconductors; 1. Introduction; 2. Electron-phonon interactions in semiconductors; 3. Phonon-phonon interactions; 4. Spontaneous Raman scattering in III-V semiconductors; 5. Spontaneous Raman scattering as a probe of nonequilibrium phonons; 6. Experimental observations of the importance of the polar coupling; 7. Nonequilibrium phonon generation in GaAs. 8. Phonon decay9. LO phonons in AlxGa1_xAs; 10. GaAs/AlxGa1-xAs heterostructures; 11. Effects of high carrier densities; 12. Nonequilibrium phonon scattering in homopolar semiconductors; 13. Conclusions; 14. Recent developments; References; Chapter 4. The Highly Non-equilibrium Hot-hole Distributions in Germanium; 1. Introduction; 2. Simulated non-Maxwellian hot-hole distributions in germanium; 3. Experimental investigations and observations of highly non-equilibrium hot-hole distributions; 4. Quantum dynamic effects in hot-hole phenomena; 5. Concluding remarks; References. Chapter 5. Femtosecond Processes in SemiconductorsIntroduction; 1. Femtosecond hole burning; 2. Femtosecond intervalley scattering; 3. Femtosecond coherent processes; 4. Femtosecond phase transitions; References; Chapter 6. Nonequilibrium Electron Transport; 1. Introduction; 2. Experiment and semiclassical understanding; 3. Current theoretical trends; 4. Concluding remarks; References; Chapter 7. Hot-Electron Photoluminescence under Continuous-Wave Pumping; 1. Introduction; 2. Hot-photoluminescence spectrum; 3. Linear polarization of hot photoluminescence. 4. Circular polarization of hot photoluminescence5. Depolarization of hot photoluminescence in a magnetic field. Determination of relaxation times; 6. Acceptor levels in GaAs; 7. Hot photoluminescence in quantum wells; References; Chapter 8. Fluctuation Spectroscopy of Hot Electrons in Semiconductors; 1. Introduction; 2. General theory; 3. Features of non-equilibrium fluctuation spectra; 4. Experimental investigation of hot-electron noise spectra; 5. Hot-electron noise length spectroscopy; 6. Influence of electron-electron collisions: general theory.
