This book focusses on the spacer engineering aspects of novel MOS-based device-circuit co-design in sub-20nm technology node, its process complexity, variability, and reliability issues. It comprehensively explores the FinFET/tri-gate architectures with their circuit/SRAM suitability and tolerance to random statistical variations.
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This book focusses on the spacer engineering aspects of novel MOS-based device-circuit co-design in sub-20nm technology node, its process complexity, variability, and reliability issues. It comprehensively explores the FinFET/tri-gate architectures with their circuit/SRAM suitability and tolerance to random statistical variations.
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2020, CRC Press
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0367573555
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9780367573553
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2020
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English
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0367573555
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9780367573553
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1498783597
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2020, CRC Press
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ISBN:
0367573555
ISBN-13:
9780367573553
Publisher:
CRC Press
Published:
2020
Language:
English
Alibris ID:
17906321573
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2017, CRC Press Inc
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Available Copies: 5
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ISBN:
1498783597
ISBN-13:
9781498783590
Publisher:
CRC Press Inc
Published:
2017
Language:
English
Alibris ID:
17507046582
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New. Contains: Illustrations, black & white, Illustrations, color, Halftones, black & white, Tables, black & white. Includes: tables, black & white, illustrations, color, illustrations, black & white, halftones, black & white. Intended for college/higher education audience.
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