This book focusses on the spacer engineering aspects of novel MOS-based device-circuit co-design in sub-20nm technology node, its process complexity, variability, and reliability issues. It comprehensively explores the FinFET/tri-gate architectures with their circuit/SRAM suitability and tolerance to random statistical variations.
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This book focusses on the spacer engineering aspects of novel MOS-based device-circuit co-design in sub-20nm technology node, its process complexity, variability, and reliability issues. It comprehensively explores the FinFET/tri-gate architectures with their circuit/SRAM suitability and tolerance to random statistical variations.
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Edition: 2020, CRC Press
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0367573555
ISBN-13:
9780367573553
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Edition: 2020, CRC Press
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0367573555
ISBN-13:
9780367573553
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CRC Press
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2020
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English
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17906321573
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1498783597
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1498783597
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9781498783590
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