This book focusses on the spacer engineering aspects of novel MOS-based device-circuit co-design in sub-20nm technology node, its process complexity, variability, and reliability issues. It comprehensively explores the FinFET/tri-gate architectures with their circuit/SRAM suitability and tolerance to random statistical variations.
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This book focusses on the spacer engineering aspects of novel MOS-based device-circuit co-design in sub-20nm technology node, its process complexity, variability, and reliability issues. It comprehensively explores the FinFET/tri-gate architectures with their circuit/SRAM suitability and tolerance to random statistical variations.
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Add this copy of Spacer Engineered FinFET Architectures: High to cart. $59.82, new condition, Sold by Booksplease rated 4.0 out of 5 stars, ships from Southport, MERSEYSIDE, UNITED KINGDOM, published 2020 by CRC Press.
Add this copy of Spacer Engineered Finfet Architectures High-Performance to cart. $118.52, new condition, Sold by Media Smart rated 4.0 out of 5 stars, ships from Hawthorne, CA, UNITED STATES, published 2017 by Taylor & Francis Group.
Add this copy of Spacer Engineered FinFET Architectures: High to cart. $180.91, new condition, Sold by Booksplease rated 4.0 out of 5 stars, ships from Southport, MERSEYSIDE, UNITED KINGDOM, published 2017 by CRC Press Inc.
