Semiconductor devices are generally analyzed with relatively simple equations or with detailed computer simulations. Most text-books use these simple equations and show device diagrams that are frequently very simplified and occasionally incorrect. For example, the carrier densities near the pinch-off point in MOSFETs and JFETs and the minority carrier density in the base near the reverse-biased base-collector junction are frequently assumed to be zero or near zero. Also the channel thickness at the pinch-off point is often ...
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Semiconductor devices are generally analyzed with relatively simple equations or with detailed computer simulations. Most text-books use these simple equations and show device diagrams that are frequently very simplified and occasionally incorrect. For example, the carrier densities near the pinch-off point in MOSFETs and JFETs and the minority carrier density in the base near the reverse-biased base-collector junction are frequently assumed to be zero or near zero. Also the channel thickness at the pinch-off point is often shown to approach zero. None of these assumptions can be correct. The research in this book addresses these points. These simulation results in this book provide a more complete understanding of device physics and device operation in those regions usually not addressed in semiconductor device physics books.
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PLEASE NOTE, WE DO NOT SHIP TO DENMARK. New Book. Shipped from UK in 4 to 14 days. Established seller since 2000. Please note we cannot offer an expedited shipping service from the UK.
Choose your shipping method in Checkout. Costs may vary based on destination.
Seller's Description:
PLEASE NOTE, WE DO NOT SHIP TO DENMARK. New Book. Shipped from UK in 4 to 14 days. Established seller since 2000. Please note we cannot offer an expedited shipping service from the UK.
