Reliability of High Mobility Sige Channel Mosfets for Future CMOS Applications

This book explores the reliability of novel (Si)Ge channel quantum well pMOSFET technology. It proposes a physical model to understand the intrinsically superior reliability of the MOS system consisting of a Ge-based channel and a SiO2/HfO2 dielectric stack. Read More

This book explores the reliability of novel (Si)Ge channel quantum well pMOSFET technology. It proposes a physical model to understand the intrinsically superior reliability of the MOS system consisting of a Ge-based channel and a SiO2/HfO2 dielectric stack. Read Less

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  	This is a digital edition of this title. Rent eBook (5 Options) 30 Day Rental: $29.70 (Expires Jan 26, 2025) 60 Day Rental: $39.60 (Expires Feb 25, 2025) 90 Day Rental: $49.50 (Expires Mar 27, 2025) 120 Day Rental: $59.40 (Expires Apr 26, 2025) 180 Day Rental: $64.35 (Expires Jun 25, 2025) Buy eBook Lifetime Access: $99.00 Title: Reliability of High Mobility Sige Channel Mosfets for Future Cmos Applications by Jacopo Franco; Ben Kaczer; Guido Groeseneken Publisher: Springer Nature Print ISBN: 9789400776623, 9400776624 eText ISBN: 9789400776630 Edition: 2013 2014 edition Format: EPUB eBook	$29.70 Rent eBook This is a digital eBook Nothing will be shipped to you Works with web browsers and the VitalSource app on all Windows, Mac, Chromebook, Kindle Fire, iOS, and Android devices Most eBooks are returnable within 14 days of purchase Questions? See our eBook FAQ