The area of high field transport in semiconductors has been of interest since the early studies of dielectric breakdown in various materials. It really emerged as a sub-discipline of semiconductor physics in the early 1960's, following the discovery of substantial deviations from Ohm's law at high electric fields. Since that time, it has become a major area of importance in solid state electronics as semiconductor devices have operated at higher frequencies and higher powers. It has become apparent since the Modena ...
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The area of high field transport in semiconductors has been of interest since the early studies of dielectric breakdown in various materials. It really emerged as a sub-discipline of semiconductor physics in the early 1960's, following the discovery of substantial deviations from Ohm's law at high electric fields. Since that time, it has become a major area of importance in solid state electronics as semiconductor devices have operated at higher frequencies and higher powers. It has become apparent since the Modena Conference on Hot Electrons in 1973, that the area of hot electrons has ex tended weIl beyond the concept of semi-classical electrons (or holes) in homogeneous semiconductor materials. This was exemplified by the broad range of papers presented at the International Conference on Hot Electrons in Semiconductors, held in Denton, Texas, in 1977. Hot electron physics has progressed from a limited phenomeno logical science to a full-fledged experimental and precision theo retical science. The conceptual base and subsequent applications have been widened and underpinned by the development of ab initio nonlinear quantum transport theory which complements and identifies the limitations of the traditional semi-classical Boltzmann-Bloch picture. Such diverse areas as large polarons, pico-second laser excitation, quantum magneto-transport, sub-three dimensional systems, and of course device dynamics all have been shown to be strongly interactive with more classical hot electron pictures.
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Add this copy of Physics of Nonlinear Transport in Semiconductors (Nato to cart. $43.94, good condition, Sold by Bonita rated 4.0 out of 5 stars, ships from Newport Coast, CA, UNITED STATES, published 2012 by Springer.
Add this copy of Physics of Nonlinear Transport in Semiconductors to cart. $60.65, new condition, Sold by Ingram Customer Returns Center rated 5.0 out of 5 stars, ships from NV, USA, published 2012 by Springer-Verlag New York Inc..
Add this copy of Physics of Nonlinear Transport in Semiconductors (Nato to cart. $49.50, very good condition, Sold by Bookfeathers LLC rated 5.0 out of 5 stars, ships from Lewisburg, PA, UNITED STATES, published 1980 by Plenum.
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NF in VG jacket. Not ex-lib. Hardcover in blue cloth, in white and blue jacket, 8vo. xx + 614p. Bibliographies and figures with papers. Set in typeface. VG+ to NF/VG-to VG. Book has mild sunning to boards off upper edges and on spine with no effect on titles. Prev. owner's name/info stamps upper corners ffep and title page. Cloth overall bright and sharp; binding tight and square; pages clean and unmarked. Jacket has sunned spine with colors fadd but titles unaffected; abrasion with light nocksalong upper edges and spine end with 1/2" x 1/2" traingular chip upper rear hinge end. Central panels clean and bright. Jacket in Brodart.
