Photon, Beam, and Plasma Assisted Processing: Proceedings of Symposium B on Photon, Beam, and Plasma Assisted Processing Fundamentals and Device Technology of the 1988 E-Mrs Spring Conference, Strasbourg, France, 31 May-2 June, 1988
Photon, Beam, and Plasma Assisted Processing: Proceedings of Symposium B on Photon, Beam, and Plasma Assisted Processing Fundamentals and Device Technology of the 1988 E-Mrs Spring Conference, Strasbourg, France, 31 May-2 June, 1988
This symposium attracted 82 papers which were presented orally or as posters. Fourteen invited speakers presented state of the art reviews and aspects of future key topics in this increasingly important area of materials science. The high level of scientific presentation during the conference enhanced the aim of the symposium, which was to stimulate discussion amongst materials scientists, chemists, engineers and physicists with a common interest in this field and to disseminate knowledge of progress. A selection of ...
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This symposium attracted 82 papers which were presented orally or as posters. Fourteen invited speakers presented state of the art reviews and aspects of future key topics in this increasingly important area of materials science. The high level of scientific presentation during the conference enhanced the aim of the symposium, which was to stimulate discussion amongst materials scientists, chemists, engineers and physicists with a common interest in this field and to disseminate knowledge of progress. A selection of contents: The d doping layer: Electronic properties and device perspectives (F. Koch, A. Zrenner). Future very-large-scale integration technology (M. Hirose). High temperature superconducting ceramics (C.J. Humphreys, D.J. Eaglesham). Theoretical Aspects. A thermal description of the melting of c- and a-silicon under pulsed excimer lasers (S. de Unamuno, E. Fogarassy). Numerical simulation of temperature distributions in layered structures during laser processing (J. Levoska et al.). Deposition. Low temperature plasma enhanced CVD of highly conductive single crystalline and polycrystalline silicon materials (J. Nijs et al.).
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