Preface. Committee Members. Invited Speakers. Workshop Photographs. Section 1: Innovations in Materials Technologies. 1.1. SMART-CUT(R) Technology: Basic Mechanisms and Applications; M. Bruel. 1.2. Polish Stop Technology for Silicon on Silicide on Insulator Structures; H.S. Gamble. 1.3. Homoepitaxy on Porous Silicon with a Buries Oxide Layer; Full-Wafer Scale SOI; S.I. Romanov, et al. 1.4. Structural and Electrical Properties of Silicon on Isolator Structures Manufactured on FZ- and CZ-Silicon by SMART-CUT Technology; V.P. ...
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Preface. Committee Members. Invited Speakers. Workshop Photographs. Section 1: Innovations in Materials Technologies. 1.1. SMART-CUT(R) Technology: Basic Mechanisms and Applications; M. Bruel. 1.2. Polish Stop Technology for Silicon on Silicide on Insulator Structures; H.S. Gamble. 1.3. Homoepitaxy on Porous Silicon with a Buries Oxide Layer; Full-Wafer Scale SOI; S.I. Romanov, et al. 1.4. Structural and Electrical Properties of Silicon on Isolator Structures Manufactured on FZ- and CZ-Silicon by SMART-CUT Technology; V.P. Popov, et al. 1.5. Development of Linear Sequential Lateral Solidification Technique to Fabricate Quasi-Single-Crystal Super-Thin Si Films for High-Performance Thin Film Transistor Devices; A.B. Limanov, et al. Section 2: Economics and Innovation Applications. 2.1. Low Temperature Polysilicon Technology: A Low Cost SOI Technology? F. Plais, et al. 2.2. A Novel Low Cost Process for the Production of Semiconductor Polycrystalline Silicon from Recycled Industrial Waste; B.N. Mukashev, et al. 2.3. Tetrahedrally Bonded Amorphous Carbon for Electronic Applications; W.I. Milne. 2.4. Diamond Based Silicon-on-Insulator Materials and Devices; S. Bengtsson, M. Bergh. 2.5. Low-Temperature Processing of Crystalline Si Films on Glass for Electronic Applications; R.B. Bergmann, et al. 2.6. beta-SiC on SiO2 Formed by Ion Implantation and Bonding for Micromechanics Applications; C. Serre, et al. 2.7. Laser Recrystallized Polysilicon Layers for Sensor Applications: Electrical Piezoresistive Characterization; A.A. Druzhinin, et al. Section 3: CharacterisationMethods for SOI. 3.1. Optical Spectroscopy of SOI Materials; A. P???rez-Rodr???guez, et al. 3.2. Computer Simulation of Oxygen Redistribution in SOI Structures; V.G. Litovchenko, A.A. Efremov. 3.3. Electrical Instabilities in Silicon-on-Insulator Structures and Devices During Voltage and Temperature Stressing; A.N. Nazarov, et al. 3.4. Hydrogen as a Diagnostic Tool in Analysing SOI Structures; A. Boutry-Forveille, et al. 3.5. Back Gate Voltage Influence on the LDD SOI NMOSFET Series Resistance Extraction from 150 to 300 K; A.S. Nicolett, et al. 3.6. Characterization of Porous Silicon Layers Containing a Buried Oxide Layer; S.I. Romanov, et al. 3.7. Total-Dose Radiation Response of Multilayer Buried Insulators; A.N. Rudenko, et al. 3.8. Recombination Current in Fully-Depleted SOI Diodes: Compact Model and Lifetime Extraction; T. Ernst, et al. 3.9. Investigation of the Structural and Chemical Properties of SOI Materials by Ellipsometry; L.A. Zabashta, et al. 3.10. Experimental Investigation and Modeling of Coplanar Transmission Lines on SOI Technologies for RF Applications; J. Lescot, et al. Section 4: Perspectives for SOI Structures and Devices. 4.1. Perspectives of Silicon-on-Insulator Technologies for Cryogenic Electronics; C. Claeys, et al. 4.2. SOI CMOS for High-Temperature Applications; J.P. Colinge. 4.3. Quantum Effect Devices on SOI Substrates with an Ultrathin Silicon Layer; Y. Omura. 4.4. Wafer Bonding for Micro-ElectroMechanical Systems (MEMS); C.A. Colinge. 4.5. A Com
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