Achieve accurate and reliable parameter extraction using this complete survey of state-of-the-art techniques and methods. A team of experts from industry and academia provides you with insights into a range of key topics, including parasitics, intrinsic extraction, statistics, extraction uncertainty, nonlinear and DC parameters, self-heating and traps, noise, and package effects. Learn how similar approaches to parameter extraction can be applied to different technologies. A variety of real-world industrial examples and ...
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Achieve accurate and reliable parameter extraction using this complete survey of state-of-the-art techniques and methods. A team of experts from industry and academia provides you with insights into a range of key topics, including parasitics, intrinsic extraction, statistics, extraction uncertainty, nonlinear and DC parameters, self-heating and traps, noise, and package effects. Learn how similar approaches to parameter extraction can be applied to different technologies. A variety of real-world industrial examples and measurement results show you how the theories and methods presented can be used in practice. Whether you use transistor models for evaluation of device processing and you need to understand the methods behind the models you use, or you want to develop models for existing and new device types, this is your complete guide to parameter extraction.
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Add this copy of Nonlinear Transistor Model Parameter Extraction to cart. $106.95, very good condition, Sold by Salish Sea Books rated 5.0 out of 5 stars, ships from Bellingham, WA, UNITED STATES, published 2011 by Cambridge University Press.
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Very Good+; Hardcover; Very light wear to the covers; Unblemished textblock edges; The endpapers and all text pages are bright and unmarked; The binding is excellent with a straight spine; This book will be stored and delivered in a sturdy cardboard box with foam padding; Medium-Large Format (Quatro, 9.75Äù Äì 10.75Äù tall); Black and green covers with title in white lettering; 2011, Cambridge University Press; 366 pages; "Nonlinear Transistor Model Parameter Extraction Techniques (The Cambridge RF and Microwave Engineering Series), " by Dr Matthias Rudolph, et al.
Add this copy of Nonlinear Transistor Model Parameter Extraction to cart. $139.48, good condition, Sold by Bonita rated 4.0 out of 5 stars, ships from Newport Coast, CA, UNITED STATES, published 2011 by Cambridge University Press.
