Excerpt from Methods of Measurement for Semiconductor Materials, Process Control, and Devices: Quarterly Report, April 1 to June 30, 1973 This quarterly progress report, twentieth of a series, describes nbs activities directed toward the development of methods of measurement for semiconductor materials, process control, and devices. Significant accomplishments during this reporting period include (1) completion of an initial identification of the more important problems in process con trol for integrated circuit ...
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Excerpt from Methods of Measurement for Semiconductor Materials, Process Control, and Devices: Quarterly Report, April 1 to June 30, 1973 This quarterly progress report, twentieth of a series, describes nbs activities directed toward the development of methods of measurement for semiconductor materials, process control, and devices. Significant accomplishments during this reporting period include (1) completion of an initial identification of the more important problems in process con trol for integrated circuit fabrication and assembly as a basis for an expanded effort to be conducted in cooperation with arpa, (2) completion of preparations for making silicon bulk resistivity wafer standards available to the industry, and (3) undertaking of new work to establish the relationship between carrier mobility and impurity density in silicon and to investigate test patterns for use in process control and evalua tion. Because of the general applicability of the first of these, a summary of the findings is presented in a separate appendix. Wdrk is continuing on measurement of resistivity of semiconductor crystals; characterization of generation - recombination-trapping centers, including gold, in silicon; evaluation of wire bonds and die attachment; study of scanning electron microscopy for wafer inspection and test; measurement of thermal properties of semiconductor devices; determination of S parameters and delay time in junction devices; and characterization of noise and conversion loss of microwave detector diodes. Supplementary data concerning staff, standards committee activities, technical serv ices, and publications are also included as appendices. This is the last report in this form; future reports in this series will appear under the title, Semiconductor Measurement Technology. Key words: Beam leads; carrier lifetime; delay time; die attachment; electrical properties; electronics; epitaxial silicon; generation centers; gold - doped silicon; methods of measurement; microelectronics; microwave diodes; mobility; pull test; recombination centers; resistiv ity; resistivity standards; scanning electron microscopy; semiconductor devices; semiconductor materials; semiconductor process control; silicon; S-parameters; spreading resistance; thermal resistance; thermally stimu lated properties; trapping centers; wire bonds. About the Publisher Forgotten Books publishes hundreds of thousands of rare and classic books. Find more at ... This book is a reproduction of an important historical work. Forgotten Books uses state-of-the-art technology to digitally reconstruct the work, preserving the original format whilst repairing imperfections present in the aged copy. In rare cases, an imperfection in the original, such as a blemish or missing page, may be replicated in our edition. We do, however, repair the vast majority of imperfections successfully; any imperfections that remain are intentionally left to preserve the state of such historical works.
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All Editions of Methods of Measurement for Semiconductor Materials, Process Control, and Devices: Quarterly Report; October 1 to December 30, 1971 (Classic Reprint)
