Off state leakage current related power dominates the CMOS heat dissipation problem of state of the art silicon integrated circuits. In this study, this issue has been addressed in terms of a low-cost single wafer processing (SWP) technique using a single tool for the fabrication of high- dielectric gate stacks for sub-45 nm CMOS. A system for monolayer photoassisted deposition was modified to deposit high-quality HfO2 films with in-situ clean, in-situ oxide film deposition, and in-situ anneal capability. The system was ...
Read More
Off state leakage current related power dominates the CMOS heat dissipation problem of state of the art silicon integrated circuits. In this study, this issue has been addressed in terms of a low-cost single wafer processing (SWP) technique using a single tool for the fabrication of high- dielectric gate stacks for sub-45 nm CMOS. A system for monolayer photoassisted deposition was modified to deposit high-quality HfO2 films with in-situ clean, in-situ oxide film deposition, and in-situ anneal capability. The system was automated with Labview 8.2 for gas/precursor delivery, substrate temperature and UV lamp. The gold-hafnium oxide-aluminum (Au-HfO2-Al) stacks processed in this system had superior quality oxide characteristics with gate leakage current density on the order of 1 x 10-12 A/cm2 @ 1V and maximum capacitance on the order of 75 nF for EOT=0.39 nm. Achieving low leakage current density along with high capacitance demonstrated the excellent performance of the process developed. Detailed study of the deposition characteristics such as linearity, saturation behavior, film thickness and temperature dependence was performed for tight control on process parameters. Using Box-Behnken design of experiments, process optimization was performed for an optimal recipe for HfO2 films. UV treatment with in-situ processing of metal/high- dielectric stacks was studied to provide reduced variation in gate leakage current and capacitance. High-resolution transmission electron microscopy (TEM) was performed to calculate the equivalent oxide thickness (EOT) and dielectric constant of the films. Overall, this study shows that the in-situ fabrication of MIS gate stacks allows for lower processing costs, high throughput, and superior device performance.
Read Less
Add this copy of Manufacturable Process/Tool for high-º/metal gate to cart. $82.29, new condition, Sold by Ingram Customer Returns Center rated 5.0 out of 5 stars, ships from NV, USA, published 2008 by VDM Verlag.
Add this copy of Manufacturable Process/Tool for high- /metal gate to cart. $89.53, new condition, Sold by GreatBookPricesUK5 rated 4.0 out of 5 stars, ships from Castle Donington, DERBYSHIRE, UNITED KINGDOM, published 2008 by VDM Verlag.
Choose your shipping method in Checkout. Costs may vary based on destination.
Seller's Description:
New. Trade paperback (US). Glued binding. 204 p. In Stock. 100% Money Back Guarantee. Brand New, Perfect Condition, allow 4-14 business days for standard shipping. To Alaska, Hawaii, U.S. protectorate, P.O. box, and APO/FPO addresses allow 4-28 business days for Standard shipping. No expedited shipping. All orders placed with expedited shipping will be cancelled. Over 3, 000, 000 happy customers.
Add this copy of Manufacturable Processtool for Highkmetal Gate to cart. $91.46, new condition, Sold by Books2anywhere rated 5.0 out of 5 stars, ships from Fairford, GLOUCESTERSHIRE, UNITED KINGDOM, published 2008 by VDM Verlag.
Choose your shipping method in Checkout. Costs may vary based on destination.
Seller's Description:
PLEASE NOTE, WE DO NOT SHIP TO DENMARK. New Book. Shipped from UK in 4 to 14 days. Established seller since 2000. Please note we cannot offer an expedited shipping service from the UK.
Add this copy of Manufacturable Processtool for Highkmetal Gate to cart. $96.80, new condition, Sold by Paperbackshop International rated 5.0 out of 5 stars, ships from Fairford, GLOS, UNITED KINGDOM, published 2008 by VDM Verlag.
Choose your shipping method in Checkout. Costs may vary based on destination.
Seller's Description:
PLEASE NOTE, WE DO NOT SHIP TO DENMARK. New Book. Shipped from UK in 4 to 14 days. Established seller since 2000. Please note we cannot offer an expedited shipping service from the UK.
Add this copy of Manufacturable Process/Tool for high- /metal gate to cart. $97.42, new condition, Sold by GreatBookPrices rated 4.0 out of 5 stars, ships from Columbia, MD, UNITED STATES, published 2008 by VDM Verlag.
Choose your shipping method in Checkout. Costs may vary based on destination.
Seller's Description:
New. Trade paperback (US). Glued binding. 204 p. In Stock. 100% Money Back Guarantee. Brand New, Perfect Condition, allow 4-14 business days for standard shipping. To Alaska, Hawaii, U.S. protectorate, P.O. box, and APO/FPO addresses allow 4-28 business days for Standard shipping. No expedited shipping. All orders placed with expedited shipping will be cancelled. Over 3, 000, 000 happy customers.
Add this copy of Manufacturable Process/Tool for High-κ/Metal Gate to cart. $97.43, new condition, Sold by BargainBookStores rated 4.0 out of 5 stars, ships from Grand Rapids, MI, UNITED STATES, published 2008 by VDM Verlag.
Add this copy of Manufacturable Processtool for Highkmetal Gate to cart. $107.56, new condition, Sold by Paperbackshop rated 4.0 out of 5 stars, ships from Bensenville, IL, UNITED STATES, published 2008 by VDM Verlag.
