The concepts in this book will provide a comprehensive overview of the current state for a broad range of nitride semiconductor devices, as well as a detailed introduction to selected materials and processing issues of general relevance for these applications.
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The concepts in this book will provide a comprehensive overview of the current state for a broad range of nitride semiconductor devices, as well as a detailed introduction to selected materials and processing issues of general relevance for these applications.
Read Less
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Seller's Description:
Textual photos & graphs. Minor rubbing. VG. 23x15cm, xiv, 700 pp, Series: Optoelectronic Properties of Semiconductors & Superlattices, Volume 16. Contains 14 papers. Includes: Ohmic Contacts to GaN; Characterization of Schottky Contacts on Nitride Semiconductors; Integration of GaN Thin Films with Dissimilar Substrate Materials of Wafer Bonding and Laser Lift-Off; Spontaneous & Piezoelectric Polarization in Nitride Heterostructures; AlGaN/NaN High Electron Mobility Transistors; Two-Dimensional Electron Gas Transport Properties in AlGaN/GaN Heterostructure Field-Effect Transistors; Electron Transport in Wide-Bandgap Semiconductors & Heterostructures; GaN Metal-Semiconductor Field-Effect Transisitor; Piezoelectric Effect in Group-III Nitride-Based Heterostructures and Quantum Wells; AlGaInN MQW Laser Diodes; Blue Vertical Cavity Surface Emitting Lasers and InGaN Quantum Dot Lasers; III-Nitride-Based UV Potodetectors; III-Nitride Ultraviolet Photodetectors; AlGaN UV Photodetectors.