First-generation semiconductors could not be properly termed "doped- they were simply very impure. Uncontrolled impurities hindered the discovery of physical laws, baffling researchers and evoking pessimism and derision in advocates of the burgeoning "pure" physical disciplines. The eventual banish- ment of the "dirt" heralded a new era in semiconductor physics, an era that had "purity" as its motto. It was this era that yielded the successes of the 1950s and brought about a new technology of "semiconductor electronics". ...
Read More
First-generation semiconductors could not be properly termed "doped- they were simply very impure. Uncontrolled impurities hindered the discovery of physical laws, baffling researchers and evoking pessimism and derision in advocates of the burgeoning "pure" physical disciplines. The eventual banish- ment of the "dirt" heralded a new era in semiconductor physics, an era that had "purity" as its motto. It was this era that yielded the successes of the 1950s and brought about a new technology of "semiconductor electronics". Experiments with pure crystals provided a powerful stimulus to the develop- ment of semiconductor theory. New methods and theories were developed and tested: the effective-mass method for complex bands, the theory of impurity states, and the theory of kinetic phenomena. These developments constitute what is now known as semiconductor phys- ics. In the last fifteen years, however, there has been a noticeable shift towards impure semiconductors - a shift which came about because it is precisely the impurities that are essential to a number of major semiconductor devices. Technology needs impure semiconductors, which unlike the first-generation items, are termed "doped" rather than "impure" to indicate that the impurity levels can now be controlled to a certain extent.
Read Less
Add this copy of Electronic Properties of Doped Semiconductors to cart. $82.75, like new condition, Sold by Fair Price Book Sales rated 2.0 out of 5 stars, ships from Fairhaven, MA, UNITED STATES, published 1984 by Springer.
Choose your shipping method in Checkout. Costs may vary based on destination.
Seller's Description:
Fine. Sewn binding. Cloth over boards. 388 p. Springer Series in Solid-State Sciences, 45. Audience: General/trade. As new condition. Price sticker from the MIT Coop bookstore. Translated from Russian by Dr. Serge Luryi Brown boards with orange border and white lettering
Add this copy of Electronic Properties of Doped Semiconductors to cart. $144.47, new condition, Sold by Ria Christie Books rated 5.0 out of 5 stars, ships from Uxbridge, MIDDLESEX, UNITED KINGDOM, published 2012 by Springer.
Add this copy of Electronic Properties of Doped Semiconductors (Springer to cart. $145.59, good condition, Sold by Bonita rated 4.0 out of 5 stars, ships from Newport Coast, CA, UNITED STATES, published 2012 by Springer.
Add this copy of Electronic Properties of Doped Semiconductors to cart. $159.29, new condition, Sold by Ingram Customer Returns Center rated 5.0 out of 5 stars, ships from NV, USA, published 2012 by Springer.
Add this copy of Electronic Properties of Doped Semiconductors (Springer to cart. $183.48, new condition, Sold by Just one more Chapter, ships from Miramar, FL, UNITED STATES, published 2012 by Springer.
Add this copy of Electronic Properties of Doped Semiconductors (Springer to cart. $192.76, new condition, Sold by Bonita rated 4.0 out of 5 stars, ships from Newport Coast, CA, UNITED STATES, published 2012 by Springer.
