Analytical Techniques for the Characterization of Compound Semiconductors: Proceedings of Symposium D on Analytical Techniques for the Characterization of Compound Semiconductors of the 1990 E-Mrs Fall Conference, Strasbourg, France, November 27-30, 1990
Analytical Techniques for the Characterization of Compound Semiconductors: Proceedings of Symposium D on Analytical Techniques for the Characterization of Compound Semiconductors of the 1990 E-Mrs Fall Conference, Strasbourg, France, November 27-30, 1990
This volume is a collection of 96 papers presented at the above Conference. The scope of the work includes optical and electrical methods as well as techniques for structural and compositional characterization. The contributed papers report on topics such as X-ray diffraction, TEM, depth profiling, photoluminescence, Raman scattering and various electrical methods. Of particular interest are combinations of different techniques providing complementary information. The compound semiconductors reviewed belong mainly to the ...
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This volume is a collection of 96 papers presented at the above Conference. The scope of the work includes optical and electrical methods as well as techniques for structural and compositional characterization. The contributed papers report on topics such as X-ray diffraction, TEM, depth profiling, photoluminescence, Raman scattering and various electrical methods. Of particular interest are combinations of different techniques providing complementary information. The compound semiconductors reviewed belong mainly to the III-V and III-VI families. The papers in this volume will provide a useful reference on the implications of new technologies in the characterization of compound semiconductors.
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