"Modern life has been revolutionized by the advancements in Complementary Metal Oxide Semiconductor (CMOS) technology. The performance of MOSFET has improved dramatically via gate length scaling since its invention. In order to serve the next generation high performance requirements with lower operating power, remorseless scaling of CMOS technology has now reached to the atomic scale dimensions. Conventional MOSFET scaling not only involves the reduction of device size but also requires a reduction in the transistor supply ...
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"Modern life has been revolutionized by the advancements in Complementary Metal Oxide Semiconductor (CMOS) technology. The performance of MOSFET has improved dramatically via gate length scaling since its invention. In order to serve the next generation high performance requirements with lower operating power, remorseless scaling of CMOS technology has now reached to the atomic scale dimensions. Conventional MOSFET scaling not only involves the reduction of device size but also requires a reduction in the transistor supply voltage (VDD). With the reduction of VDD, the threshold voltage (Vth) must be scaled down simultaneously in order to attain reasonable ON-state current, reduce delay and to maintain sufficient gate overdrive voltage. As a consequence of device scaling following Moore's law, every year the channel length of the MOSFET is reducing, causing Short Channel Effect (SCEs). Different strategies have been considered to surmount SCEs using different device architectures and material compositions."--
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